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2020

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• Bürger J, Gutsch S, Zacharias M
  Transition from freestanding SnO2 nanowires to laterally aligned nanowires with a simulation-based experimental design
  2020 Beilstein J Nanotech, Band: 11, Seite: 843-853
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  Kurzfassung

  In this study, we used simulations as a guide for experiments in order to switch freestanding nanowire growth to a laterally aligned growth mode. By means of finite element simulations, we determined that a higher volumetric flow and a reduced process pressure will result in a preferred laterally aligned nanowire growth. Furthermore, increasing the volumetric flow leads to a higher species dilution. Based on our numerical results, we were able to successfully grow laterally aligned SnO2 nanowires out of gold film edges and gold nanoparticles on a-plane sapphire substrates. In our experiments a horizontal 2-zone tube furnace was used. The generation of Sn gas was achieved by a carbothermal reduction of SnO2 powder. However, we observed no elongation of the nanowire length with an increase of the process time. Nevertheless, an alternating gas exchange between an inert gas (Ar) and an oxygen-containing process atmosphere yielded an elongation of the laterally aligned nanowires, indicating that the nanowire growth takes place in a transient period of the gas exchange.

2019

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• Neelisetty KK, Mu X, Gutsch S, Vahl A, Molinari A, Von Seggern F, Hansen M, Scherer T, Zacharias M, Kienle L, Kiran Chakravadhanula VS Kübel C
  Electron Beam Effects on Oxide Thin Films-Structure and Electrical Property Correlations
  2019 Microsc Microanal, Band: 25, Nummer: 3, Seite: 592-600
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  Kurzfassung

  In situ transmission electron microscope (TEM) characterization techniques provide valuable information on structure–property correlations to understand the behavior of materials at the nanoscale. However, understanding nanoscale structures and their interaction with the electron beam is pivotal for the reliable interpretation of in situ/ex situ TEM studies. Here, we report that oxides commonly used in nanoelectronic applications, such as transistor gate oxides or memristive devices, are prone to electron beam induced damage that causes small structural changes even under very low dose conditions, eventually changing their electrical properties as examined via in situ measurements. In this work, silicon, titanium, and niobium oxide thin films are used for in situ TEM electrical characterization studies. The electron beam induced reduction of the oxides turns these insulators into conductors. The conductivity change …
  
  
   
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• Graf D, Burchard S, Crespo J, Megnin C, Gutsch G, Zacharias Z, Hanemann T
  Influence of Al2O3 Nanoparticle Addition on a UV Cured Polyacrylate for 3D Inkjet Printing
  2019 Polymers-basel, Band: 11, Nummer: 4, Seite: 633
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  Kurzfassung

  The brittleness of acrylic photopolymers, frequently used in 3D Inkjet printing, limits their utilization in structural applications. In this study, a process was developed for the production and characterization of an alumina-enhanced nanocomposite with improved mechanical properties for Inkjet printing. Ceramic nanoparticles with an average primary particle size (APPS) of 16 nm and 31 nm, which was assessed via high-resolution scanning electron microscopy (HRSEM), were functionalized with 3.43 and 5.59 mg/m² 3-(trimethoxysilyl) propyl methacrylate (MPS), respectively, while being ground in a ball mill. The suspensions of the modified fillers in a newly formulated acrylic mixture showed viscosities of 14 and 7 mPa∙ s at the printing temperature of 60 C. Ink-jetting tests were conducted successfully without clogging the printing nozzles. Tensile tests of casted specimens showed an improvement of the tensile strength and elongation at break in composites filled with 31 nm by 10.7% and 74.9%, respectively, relative to the unfilled polymer.
• Valenta J, Greben M, Dyakov S.A., Gippius N. A., Hiller D, Gutsch S, Zacharias M
  Nearly perfect near-infrared luminescence efficiency of Si nanocrystals: A comprehensive quantum yield study employing the Purcell effect
  2019 Sci Rep-uk, Band: 9, Nummer: 11214
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  Kurzfassung

  9, Article number: 11214 (2019)
• Chlouba T, Trojánek F, Kopecký V, López-Vidrier J, Hernandéz S, Hiller D, Gutsch S, Zacharias M, Malý P
  Pathways of carrier recombination in Si/SiO2 nanocrystal superlattices
  2019 J Appl Phys, Band: 126, Nummer: 163101
• Cruz-Matias I, Ayala Dolors, Hiller D, Gutsch S, Zacharias M, Estrade S, Peiro F
  Sphericity and roundness computation for particles using the extreme vertices model
  2019 J Comput Sci-neth, Band: 30, Seiten: 28 - 40
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  Kurzfassung

  Shape is a property studied for many kinds of particles. Among shape parameters, sphericity and roundness indices had been largely studied to understand several processes. Some of these indices are based on length measurements of the particle obtained from its oriented bounding box (OBB). In this paper we follow a discrete approach based on Extreme Vertices Model and devise new methods to compute the OBB and the mentioned indices. We apply these methods to synthetic sedimentary rocks and to a real dataset of silicon nanocrystals (Si NC) to analyze the obtained results and compare them with those obtained with a classical voxel model.

2018

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• Hiller D, López-Vidrier J, Nomoto K, Wahl M, Bock W, Chlouba T, Trojanek F, Gutsch S, Zacharias M, König D, Maly P, Kopnarski M
  Absence of free carriers in silicon nanocrystals grown from phosphorus-and boron-doped silicon-rich oxide and oxynitride
  2018 Beilstein J Nanotech, Band: 9, Nummer: 1, Seiten: 1501 - 1511
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  Kurzfassung

  Phosphorus-and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH 4 and N 2 O are used as precursor gasses, which inevitably leads to the incorporation of≈ 10 atom% nitrogen, rendering the matrix a silicon oxynitride. Alternatively, SiH 4 and O 2 can be used, which allows for completely N-free silicon oxide. In this work, we investigate the properties of B-and P-incorporating Si NCs embedded in pure silicon oxide compared to silicon oxynitride by atom probe tomography (APT), low-temperature photoluminescence (PL), transient transmission (TT), and current–voltage (I–V) measurements. The results clearly show that no free carriers, neither from P-nor from B-doping, exist in the Si NCs, although in some configurations charge carriers can be generated by electric field ionization. The absence of free carriers in Si NCs≤ 5 nm in diameter despite the presence of P-or B-atoms has severe implications for future applications of conventional impurity doping of Si in sub-10 nm technology nodes.
• López-Vidrier J, Gutsch S, Blázquez O, Valenta J, Hiller D, Laube J, Blanco-Portals J, López-Conesa L, Estradé S, Peiró F, Garrido B, Hernández S, Zacharias M
  Effect of Si3N4-Mediated Inversion Layer on the Electroluminescence Properties of Silicon Nanocrystal Superlattices
  2018 Adv Electron Mater, Band: 4, Nummer: 1700666
• Neelisetty KK, Gutsch S, von Seggern F, Molinari A, Vahl A, Mu X, Scherer T, Chakravadhanula K, Kübel C
  Electron Beam Effects on Silicon Oxide Films–Structure and Electrical Properties
  2018 Microsc Microanal, Band: 24, Nummer: S1, Seiten: 1810 - 1811
• Bürger JC, Gutsch S, Zacharias M
  Extended View on the Vapor–Liquid–Solid Mechanism for Oxide Compound Nanowires: The Role of Oxygen, Solubility, and Carbothermal Reaction
  2018 J Phys Chem C, Band: 122, Nummer: 42, Seiten: 24407 - 24414
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  Kurzfassung

  The Si nanowire growth can be well explained by the classical vapor–liquid–solid (VLS) process taking into account the respective Au–Si phase diagram. For oxide-based compound materials, no phase diagram with gold exists because of the insolubility of these materials into the Au catalyst material. Hence, it is not correct to claim a simple VLS mechanism for the respective growth. In this study, a more complex model for the growth of oxide nanowires (NWs) is proposed by analyzing the influence of oxygen concentration and timing of oxygen inflow into the furnace while growing SnO2 NWs by a carbothermal chemical vapor deposition process. It is shown that a controlled amount of oxygen is mandatory to grow the SnO2 NWs. However, either too low or too high oxygen concentration strongly suppresses the nanowire growth.
• Chlouba T, Trojánek F, Laube J, Hiller D, Gutsch S, Zacharias M, Malý P
  Interplay of bimolecurlar and Auger recombination in photoexcited carrier dynamics in silicon nanocrystal/silicon dioxide superlattices
  2018 Sci Rep-uk, Band: 1703
• Beh H, Hiller D, Zacharias M
  Optimization of ALD-ZnO Thin Films Toward Higher Conductivity
  2018 Phys Status Solidi A, Band: 1700880
• Beh H, Hiller D, Salava J, Trojánek F, Zacharias M, Malý P, Valenta J
  Photoluminescence Dynamics and Quantum Yield of Intrinsically Conductive ZnO from Atomic Layer Deposition
  2018 J Lumin, Band: 201, Nummer: 85
• Williams M, Jervell A, Hiller D, Zacharias M
  Using HCl to Control Silver Dissolution in Metal‐Assisted Chemical Etching of Silicon
  2018 Phys Status Solidi A, Band: 215, Nummer: 13, Seite: 1800135

2017

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• Nomoto K, Hiller D, Gutsch S, Ceguerra AV, Breen A, Zacharias M, Conibeer G, Perez-Wurfl I, Ringer SP
  Atom probe tomography of size-controlled phosphorus doped silicon nanocrystals
  2017 Phys Status Solidi-r, Band: 11, Nummer: 1, Seite: 1600376
• Hiller D, López-Vidrier J, Gutsch S, Margit Zacharias, Michael Wahl, Wolfgang Bock, Alexander Brodyanski, Michael Kopnarski, Keita Nomoto, Jan Valenta, Dirk König
  Boron-Incorporating Silicon Nanocrystals Embedded in SiO 2: Absence of Free Carriers vs. B-Induced Defects
  2017 Sci Rep-uk, Band: 7, Nummer: 1, Seite: 8337
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  Kurzfassung

  Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photoluminescence of Si nanocrystals via non-radiative Auger recombination. In addition, the holes should allow for a non-transient electrical current. However, on the bottom end of the nanoscale, both substitutional incorporation and ionization are subject to significant increase in their respective energies due to confinement and size effects. Nevertheless, successful B-doping of Si nanocrystals was reported for certain structural conditions. Here, we investigate B-doping for small, well-dispersed Si nanocrystals with low and moderate B-concentrations. While small amounts of B-atoms are incorporated into these nanocrystals, they hardly affect their optical or electrical properties. If the B …
• Greben M, Khoroshyy P, Gutsch S, Hiller D, Zacharias M, Valenta J
  Changes of the absorption cross section of Si nanocrystals with temperature and distance
  2017 Beilstein J Nanotech, Band: 8, Nummer: 1, Seiten: 2315 - 2323
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  Kurzfassung

  The absorption cross section (ACS) of silicon nanocrystals (Si NCs) in single-layer and multilayer structures with variable thickness of oxide barriers is determined via a photoluminescence (PL) modulation technique that is based on the analysis of excitation intensity-dependent PL kinetics under modulated pumping. We clearly demonstrate that roughly doubling the barrier thickness (from ca. 1 to 2.2 nm) induces a decrease of the ACS by a factor of 1.5. An optimum separation barrier thickness of ca. 1.6 nm is calculated to maximize the PL intensity yield. This large variation of ACS values with barrier thickness is attributed to a modulation of either defect population states or of the efficiency of energy transfer between confined NC layers. An exponential decrease of the ACS with decreasing temperature down to 120 K can be explained by smaller occupation number of phonons and expansion of the band gap of Si NCs at low temperatures. This study clearly shows that the ACS of Si NCs cannot be considered as independent on experimental conditions and sample parameters.
• Hiller D., López-Vidrier J, Gutsch S, Zacharias M, Nomoto K, König D
  Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size
  2017 Sci Rep-uk, Band: 7, Seite: 863
• Beh H, Hiller D, Laube J, Gutsch S, Zacharias M
  Deposition temperature dependence and long-term stability of the conductivity of undoped ZnO grown by atomic layer deposition
  2017 J Vac Sci Technol A, Band: 35, Nummer: 1, Seite: 01B127
• Hiller D, Gutsch G, López‐Vidrier J, Zacharias M, Estradé S, Peiró F, Cruz‐Matías I, Ayala D
  Determination of Shape and Sphericity of Silicon Quantum Dots Imaged by EFTEM‐Tomography
  2017 physica status solidi c, Band: 14, Nummer: 12, Seite: 1700216
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  The shape of size‐controlled silicon nanocrystals (Si NCs) embedded in SiO2 is investigated by tomographic energy‐filtered transmission electron microscopy (EFTEM). The sphericity of the quantum dots is determined by computational analyses. In contrast to other fabrication methods, we demonstrate that the NCs in superlattices are non‐agglomerated, individual clusters with slightly oblate spheroidal shape. This allows for low surface‐to‐volume ratios and thereby low non‐radiative defect densities as required by optoelectronic or sensing applications. A near‐spherical shape is also a prerequisite for the direct comparison of Si quantum dots (QDs) with theoretical simulations.
• Jakob M, Gutsch S, Chatelle C, Krishnaraja A, Fahlteich J, Weber W, Zacharias M
  Flexible thin film pH sensor based on low-temperature atomic layer deposition
  2017 Phys Status Solidi-r
• Willams M, Hiller D, Bergfeldt T, Zacharias M
  How the Oxidation Stability of Metal Catalysts Defines the Metal-Assisted Chemical Etching of Silicon
  2017 J Phys Chem C, Band: 121, Nummer: 17, Seiten: 9296 - 9299
• Jakob M, Bo D, Gutsch S, Chatelle C, Krishnaraja A, Weber W, Zacharias M
  Label-free SnO2 nanowire FET biosensor for protein detection
  2017 Nanotechnology, Band: 28, Nummer: 24, Seite: 245503
• König D, Hiller D, Gutsch S, Zacharias M, Smith S
  Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide
  2017 Sci Rep-uk, Band: 7, Seite: 46703
• López-Vidrier J, Gutsch S, Blázquez O, Hiller D, Kaur R, Hernández S, Garrido B, Zacharias M
  Modulation of the electroluminescence emission from ZnO/Si NCs/p-Si light-emitting devices via pulsed excitation
  2017 Appl Phys Lett, Band: 110, Nummer: 20, Seite: 203104
• Valenta J, Greben M, Gutsch S, Hiller D, Zacharias M
  Photoluminescence performance limits of Si nanocrystals in silicon oxynitride matrices
  2017 J Appl Phys, Band: 122, Nummer: 14, Seite: 144303
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  Kurzfassung

  The present comprehensive study of photoluminescence (PL) quantum yield (QY) of Si nanocrystals (SiNCs) in Si-rich oxynitride (SRON) superlattices was performed over a broad set of samples. The PL QY is sensitive mostly to the thickness of SRON and barrier oxide layers and to the passivation procedures. Annealing in hydrogen improves the QY proportionally to the NC surface area by passivating the NC/oxide interface defects present at a surface density of about 2.5 × 1012 cm−2. The maximum external QY of nearly 30% is found in well-passivated superlattices with a SiNC size of about 4 nm and a SiO2 barrier thickness of 2 nm or larger. We reveal the existence of an extended near-infrared tail of the PL spectra, whose weak intensity anti-correlates with the external QY. The relative intensity of this emission increases with temperature as well as for strong excitation above the PL saturation level and …
• Pushkarev V, Ostatnický T, Němec H, Chlouba T, Trojánek F, Malý P, Zacharias M, Gutsch S, Hiller D, Kužel P
  Quantum behavior of terahertz photoconductivity in silicon nanocrystals networks
  2017 Phys Rev B, Band: 95, Seite: 125424
• Beh H, Hiller D, Bruns M, Welle A, Becker H, Berghoff B, Sürgers C, Merz R, Zacharias M
  Quasi-metallic behavior of ZnO grown by atomic layer deposition: The role of hydrogen
  2017 J Appl Phys, Band: 122, Nummer: 2, Seite: 025306
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  Zinc oxide (ZnO) fabricated by atomic layer deposition (ALD) is intrinsically well-conductive (∼5 mΩ cm), in contrast to the single-crystalline bulk material or sputtered ZnO thin films. There are generally three groups of candidates for the intrinsic n-type conductivity: intrinsic point defects, elemental impurities other than hydrogen, and incorporated hydrogen itself. In this study, we assess the different candidates concerning their impact on conductivity. In the presence of free electron densities of up to 5 × 1019 cm−3, impurities other than hydrogen are ruled out due to their ultra-low concentrations in the ppm range. Intrinsic point defects are also considered unlikely since the evolution of conductivity with deposition temperature is not reproduced in the Zn/O ratio as measured by Rutherford backscattering spectrometry. Hence, the most promising candidate is hydrogen with a concentration of ∼1 at. %, i.e., more …
• Cai Y, Kozhummal R, Kübel C, Trouillet V, Bruns M, Gutsch S, Zacharias M, Yang Y
  Spatial Separation of Photogenerated Electron–Hole Pairs in Solution-Grown ZnO Tandem n–p Core–Shell Nanowire Arrays toward Highly Sensitive Photoelectrochemical Detection of Hydrogen Peroxide
  2017 J Mater Chem A

2016

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• Boehler C, Güder F, Kücükbayrak UM, Zacharias M, Asplund M
  A Simple Approach for Molecular Controlled Release based on Atomic Layer Deposition Hybridized Organic-Inorganic Layers
  2016 Sci Rep-uk, Band: 6, Seite: 19574
• Hiller D, Laube J, Gutsch S, Zacharias M
  Comment on “Thickness and temperature depending intermixing of SiOx/SiO2 and SiOxNy/SiO2 superlattices: Experimental observation and thermodynamic modeling” [Appl. Phys. Lett. 108, 223102 (2016)]
  2016 Appl Phys Lett, Band: 109, Seite: 166101
• Valenta J, Greben M, Remeš Z, Gutsch S, Hiller D, Zacharias M
  Determination of absorption cross-section of Si nanocrystals by two independent methods based on either absorption or luminescence
  2016 Appl Phys Lett, Band: 108, Seite: 023102
• Dalmau Mallorquí A, Alarcn-Llad E, Canales Mundet I, Amirreza K, Demaurex B, De Wolf S, Menzel A, Zacharias M, Fontcuberta I Morral
  Field-effect passivation on silicon nanowire solar cells
  2016 Nano Res, Band: 8, Nummer: 9, Seite: 1220
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  Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n–p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography (NF-PSL). We report an efficiency of 9.9% for the best cell, passivated with a SiO2/SiNx stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied.
• Bley S, Albrecht F, Resch S, Waldvogel SR, Menzel A, Zacharias M, Voss T, Gutowski J
  Luminescence dynamics of hybrid ZnO nanowire/CdSe quantum dot structures
  2016 Phys Status Solidi C, Band: 1, Seite: 1
• Dyakov SA, Zhigunov DM, Marinins A, Shcherbakov MR, Fedyanin AA, Vorontsov AS, Kashkarov PK, Popov S, Qiu M, Zacharias M, Tikhodeev SG, Gippius NA
  Optical properties of silicon nanocrystals covered by periodic array of gold nanowires
  2016 Phys Rev B, Band: 93, Seite: 205413
• Kořínek A, Trojánek F, Hiller D, Gutsch S, Zacharias M, Kübel C, Malý P
  Picosecond dynamics of photoexcited carriers in interacting silicon nanocrystals
  2016 Appl Surf Sci, Band: 377, Seite: 238
• Lee BG, Luo J-W, Neale NR, Beard MC, Hiller D, Zacharias M, Stradins P, Zunger A
  Quasi-Direct Optical Transitions in Silicon Nanocrystals with Intensity Exceeding the Bulk
  2016 Nano Lett, Band: 16, Seite: 1583
• Laube J, Nübling D, Beh H, Gutsch S, Hiller D, Zacharias M
  Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing
  2016 Thin Solid Films, Band: 603, Seite: 377
• Kujala J, Slotte J, Tuomisto F, Hiller D, Zacharias M
  Si nanocrystals and nanocrystal interfaces studied by positron annihilation
  2016 J Appl Phys, Band: 120, Seite: 145302
• Laube J, Gutsch S, Wang D, Kübel C, Zacharias M, Hiller D
  Two-dimensional percolation threshold in confined Si nanoparticle networks
  2016 Appl Phys Lett, Band: 108, Seite: 043106

2015

 nach oben zur Jahresübersicht

• Guan C, Wang Y, Zacharias M, Wang J, Fan HJ
  Atomic-layer-deposition alumina induced carbon on porous NixCo1-xO nanonets for enhanced pseudocapacitive and Li-ion storage performance
  2015 Nanotechnology, Band: 26, Seite: 014001
• Němec H, Zajac V, Kužel P, Malý P, Gutsch S, Hiller D, Zacharias M
  Charge transport in silicon nanocrystal superlattices in the terahertz regime
  2015 Phys Rev B, Band: 91, Seite: 195443
• Wang Z, Kojda D, Peranio N, Kroener M, Mitdank R, Toellner W, Nielsch K, Fischer SF, Gutsch S, Zacharias M, Eibl O, Woias P
  Dielectrophoretic investigation of Bi2Te3 nanowires—a microfabricated thermoelectric characterization platform for measuring the thermoelectric and structural properties of single nanowires
  2015 Nanotechnology, Band: 26, Seite: 125707
• Bley S, Diez M, Albrecht F, Resch S, Waldvogel SR, Menzel A, Zacharias M, Gutowski J, Voss T
  Electron tunneling from colloidal CdSe quantum dots to ZnO nanowires studied by time-resolved luminescence and photoconductivity experiments
  2015 J Phys Chem C, Band: 119, Seite: 15627
• Gutsch S, Laube J, Hiller D, Bock W, Wahl M, Kopnarski M, Gnaser H, Puthen-Veettil B, Zacharias M
  Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO2
  2015 Appl Phys Lett, Band: 106, Seite: 113103
• Vierrath S, Güder F, Menzel A, Hagner M, Zengerle R, Zacharias M, Thiele S
  Enhancing the quality of the tomography of nanoporous materials for better understanding of polymer electrolyte fuel cell materials
  2015 J Power Sources, Band: 285, Seite: 413
• Zelenina A, Sarikov A, Gutsch S, Zakharov N, Werner P, Reichert A, Weiss C, Zacharias M
  Formation of size-controlled and luminescent Si nanocrystals from SiOxNy/Si3N4 hetero-superlattices
  2015 J Appl Phys, Band: 117, Seite: 175303
• Gad KM, Vössing D, Balamou P, Hiller D, Stegemann B, Angermann H, Kasemann M
  Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation
  2015 Appl Surf Sci, Band: 353, Seiten: 1269 - 1276
• König D, Gutsch S, Gnaser H, Wahl M, Kopnarski M, Göttlicher J, Steininger R, Zacharias M, Hiller D
  Location and Electronic Nature of Phosphorus in the Si Nanocrystal − SiO2 System
  2015 Sci Rep-uk, Band: 5, Seite: 9702
• Gutsch S, Hiller D, Laube J, Zacharias M, Kübel C
  Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes
  2015 Beilstein J Nanotech, Band: 6, Seite: 964
• Ibáñez J, Hernández S, López-Vidrier J, Hiller D, Gutsch S, Zacharias M, Segura A, Valenta J, Garrido B
  Optical emission from SiO2-embedded silicon nanocrystals: A high-pressure Raman and photoluminescence study
  2015 Phys Rev B, Band: 92, Seite: 035432
• Kořínek M, Trojánek F, Hiller D, Gutsch S, Zacharias M, Malý P
  Picosecond dynamics of photoexcited carriers in silicon nanocrystal/Si3N4 superlattices: Presence of K0 centers
  2015 J Appl Phys, Band: 117, Seite: 093101
• López-Vidrier J, Berencén Y, Hernández S, Mundet B, Gutsch S, Laube J, Hiller D, Löper P, Schnabel M, Janz M, Zacharias M, Garrido B
  Structural parameters effect on the electrical and electroluminescence properties of silicon nanocrystals/SiO2 superlattices
  2015 Nanotechnology, Band: 26, Seite: 185704
• Menzel A, Komin K, Yang Y, Güder F, Trouillet V, Werner P, Zacharias M
  Ultra-long zinc oxide nanowires and boron doping based on ionic liquid assisted thermal chemical vapor deposition growth
  2015 Nanoscale, Band: 7, Seite: 92

2014

 nach oben zur Jahresübersicht

• Hiller D, Gutsch S, Hartel AM, Löper P, Gebel T, Zacharias M
  A low thermal impact annealing process for SiO2-embedded Si nanocrystals with optimized interface quality
  2014 J Appl Phys, Band: 115, Seite: 134311
• Hiller D, Zelenina A, Gutsch S, Dyakov SA, López-Conesa L, López-Vidrier J, Estradé S, Peiró F, Garrido B, Valenta J, Kořínek M, Trojánek F, Malý P, Schnabel M, Weiss C, Janz S, Zacharias M
  Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals
  2014 J Appl Phys, Band: 115, Seite: 204301
• López-Vidrier J, Hernández S, Hiller D, Gutsch S, López-Conesa L, Estradé S, Peiró F, Zacharias M, Garrido B
  Annealing temperature and barrier thickness effect on the structural and optical properties of silicon nanocrystals/SiO2 superlattices
  2014 J Appl Phys, Band: 116, Seite: 133505
• Sarikov A, Voitovych M, Lisovskyy I, Naseka V, Hartel A, Hiller D, Gutsch S, Zacharias M
  Characteristics of Hydrogen Effusion from the Si-H Bonds in Si Rich Silicon Oxynitride
  2014 Advanced Materials Research, Band: 854, Seiten: 69 - 74
• Hou D, Voss T, Ronning C, Menzel A, Zacharias M
  Deep-level emission in ZnO nanowires and bulk crystals: Excitation-intensity dependence versus crystalline quality
  2014 J Appl Phys, Band: 115, Seite: 233516
• Hernández S, López-Vidrier J, López-Conesa L, Hiller D, Gutsch S, Ibáñez J, Estradé S, Peiró F, Zacharias M, Garrido B
  Determining the crystalline degree of silicon nanoclusters/SiO2 multilayers by Raman scattering
  2014 J Appl Phys, Band: 115, Seite: 203504
• Valenta J, Greben M, Gutsch S, Hiller D, Zacharias M
  Effects of inter-nanocrystal distance on luminescence quantum yield in ensembles of Si nanocrystals
  2014 Appl Phys Lett, Band: 105, Seite: 243107
• Wongchoosuk C, Subannajui K, Wang C, Yang Y, Güder F, Kerdcharoen T, Cimalla V, Zacharias M
  Electronic nose for toxic gas detection based on photostimulated core-shell nanowires
  2014 Rsc Adv, Band: 4, Nummer: 66, Seiten: 35084 - 35088
• König D, Hiller D, Gutsch S, Zacharias M
  Energy Offset Between Silicon Quantum Structures: Interface Impact of Embedding Dielectrics as Doping Alternative
  2014 Advanced Materials Interfaces, Band: 1, Seite: 1400359
• Güder F, Frei E, Kücükbayrak U, Menzel A, Thomann R, Luptak R, Hollaender B, Krossing I, Zacharias M
  Engineered high aspect ratio vertical nanotubes as a model system for the investigation of catalytic methanol synthesis over Cu/ZnO
  2014 Acs Appl Mater Inter, Band: 6, Seite: 1576
• Mallorquí AD, Alarcón-Lladó E, Mundet IC, Kiani A, Demaurex B, De Wolf S, Menzel A, Zacharias M, Fontcuberta i Morral A
  Field-effect passivation on silicon nanowire solar cells
  2014 Nano Res, Band: 0, Seite: 0
• Laube J, Gutsch S, Hiller D, Bruns S, Kübel C, Weiss C, Zacharias M
  Formation of size controlled silicon nanocrystals in nitrogen free silicon dioxide matrix prepared by plasma enhanced chemical vapor deposition
  2014 J Appl Phys, Band: 116, Nummer: 22, Seite: 223501
• Kühnhold S, Saint-Cast P, Kafle B, Hofmann M, Colonna F, Zacharias M
  High-temperature degradation in plasma-enhanced chemical vapor deposition Al2O3 surface passivation layers on crystalline silicon
  2014 J Appl Phys, Band: 116, Seite: 054507
• Kozák M, Kořínek M, Trojánek F, Hiller D, Gutsch S, Zacharias M, Malý P
  Hot-phonon-induced indirect absorption in silicon nanocrystals
  2014 J Appl Phys, Band: 114, Seite: 173103
• Gnaser H, Gutsch S, Wahl M, Schiller R, Kopnarski M, Hiller D, Zacharias M
  Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography
  2014 J Appl Phys, Band: 115, Seite: 034304
• Kořínek M, Kozák M, Trojánek F, Hiller D, Hartel A, Gutsch S, Zacharias M, Malý P
  Photoexcited charge carrier dynamics in silicon nanocrystal/SiO2 superlattices
  2014 Physica E, Band: 56, Seite: 177
• Zelenina A, Sarikov A, Zhigunov DM, Weiss C, Zakharov N, Werner P, López-Conesa L, Estradé S, Peiró F, Dyakov SA, Zacharias M
  Silicon nanocrystals in SiNx/SiO2 hetero-superlattices: The loss of size control after thermal annealing
  2014 J Appl Phys, Band: 115, Seite: 244304

2013

 nach oben zur Jahresübersicht

• Löper P, Pysch D, Richter A, Hermle M, Janz S, Zacharias M, Glunz S.W.
  Analysis of the Temperature Dependence of the Open-Circuit Voltage
  2013 Energy Procedia, Band: 27, Seiten: 135 - 142
• Kozhummal R, Yang Y, Güder F, Kücükbayrak U, Zacharias M
  Antisolvent Crystallization Approach to Construction of CuI Superstructures with Defined Geometries
  2013 Acs Nano, Band: 7, Seiten: 2820 - 2828
• López-Vidrier J, Berencén Y, Hernández S, Blázquez O, Gutsch S, Laube J, Hiller D, Löper P, Schnabel M, Janz S, Zacharias M, Garrido B
  Charge transport and electroluminescence of silicon nanocrystals/SiO2 superlattices
  2013 J Appl Phys, Band: 114, Seite: 163701
• Gutsch S, Laube J, Hartel A.M., Hiller D, Zakharov N, Werner P, Zacharias M
  Charge transport in Si nanocrystal/SiO2 superlattices
  2013 J Appl Phys, Band: 113, Seiten: 133703 - 133712
• Menzel A, Guebeli, Güder F, Weber W, Zacharias M
  Detection of Real-Time Dynamics of Drug-Target Interactions by Ultralong Nanowalls
  2013 Lab Chip 2013, Band: 13, Seiten: 4173 - 4179
• Kozák M, Kořínek M, Trojánek F, Hiller D, Gutsch S, Zacharias M, Malý P
  Hot-phonon-induced indirect absorption in silicon nanocrystals
  2013 J Appl Phys, Band: 114, Seite: 173103
• Hartel AM, Gutsch S, Hiller D, Zacharias M
  Intrinsic nonradiative recombination in ensembles of silicon nanocrystals
  2013 Phys Rev B, Band: 87, Seite: 035428
• Subannajui K, Menzel A, Güder F, Yang Y, Schumann K, Lu X, Zacharias M
  Large-Scale Nano Piezo Force Position Arrays as Ultrahigh-Resolution Micro-and Nanoparticle Tracker
  2013 Adv Funct Mater (Advanced Funtional Materials) 2013, Band: 23, Nummer: 2, Seiten: 191 - 197
• Löper P, Canino M, Qazzazie D, Schnabel M, Allegrezza M, Summonte C, Glunz S, Janz S, Zacharias M
  Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination
  2013 Appl Phys Lett, Band: 102, Nummer: 3, Seite: 033507
• Löper P, Canino M, Lopez-Vidrier J, Bellettato M, Allegrezza M, Hiller D, Hartel, A M, Gutsch S, Hernandez S, , Guerra R, Ossicini S, Garrido B, Janz S, Zacharias M
  Silicon nanocrystals from high-temperature annealing: Characterization on device level
  2013 Phys. Status Solidi A 2013, Band: 210, Nummer: 4, Seiten: 669 - 675
• König D, Hiller H, Zacharias M, Michard S, Flynn C
  Static hot carrier populations as a function of optical excitation energy detected through energy selective contacts by optically assisted IV
  2013 Prog. Photovolt: Res. Appl. (2013)
• Zelenina A, Dyakov SA, Hiller D, Gutsch S, Trouillet V, Bruns M, Mirabella S, Löper P, López-Conesa L, López-Vidrier J, Estradé S, Peiró F, Garrido B, Bläsing J, Krost A, Zhigunov DM, Zacharias M
  Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift
  2013 J Appl Phys, Band: 114, Seite: 184311
• Güder F, Yang Y, Küçükbayrak U.M., Zacharias M
  Tracing the Migration History of Metal Catalysts in Metal-Assisted Chemically Etched Silicon
  2013 Acs Nano, Band: 7, Seiten: 1583 - 1590

2012

 nach oben zur Jahresübersicht

• Löper P, Stüwe D, Künle M, Bivour M, Reichel C, Neubauer R, Schnabel M, Hermle M, Eibl O, Janz S, Zacharias M, Glunz S
  A Membrane Device for Substrate-Free Photovoltaic Characterization of Quantum Dot Based p-i-n Solar Cells
  2012 Adv Mater, Band: 24, Nummer: 23, Seiten: 3124 - 3129
• Subannajui K, Güder F, Danhof J, Yang Y, Kirste L, Wang C, Cimalla V, Schwarz U, Zacharias M
  An advanced fabrication method of highly ordered ZnO nanowire arrays on silicon substrates by atomic layer deposition
  2012 Nanotechnology, Band: 23, Seite: 235607
• Zacharias M, Hiller D, Hartel AM, Gutsch S
  Defect engineering of Si nanocrystal interfaces and the temperature dependence of the band gap of size selected Si nanocrystals
  2012 Phys Status Solidi A
• Gutsch S, Hartel A, Hiller D, Zakharov N, Werner P, Zacharias M
  Doping efficiency of Phosphorus Doped Silicon Nanocrystals embedded in a SiO2 matrix
  2012 Appl Phys Lett, Band: 100, Nummer: 23, Seite: 233115
• Dyakov S, Zhigunov DM, Hartel A, Zacharias M, Perova TS, Timoshenko VYu
  Enhancement of photoluminescence signal from ultrathin layers with silicon nanocrystals
  2012 Appl Phys Lett, Band: 100, Seite: 061908
• Kozhummal R, Berenschot E, Jansen H, Tas N, Zacharias M, Elwenspoek M
  Fabrication of micron-sized tetrahedra by Si〈1 1 1〉 micromachining and retraction edge lithography
  2012 J Micromech Microeng, Band: 22, Nummer: 8, Seite: 085032
• Hartel A, Gutsch S, Hiller D, Zacharias M
  Fundamental temperature-dependent properties of the Si nanocrystal band gap
  2012 Phys Rev B, Band: 85, Nummer: 16, Seite: 165306
• Sarikov A, Zacharias M
  Gibbs free energy and equilibrium states in the Si/Si oxide system
  2012 J Phys-condens Mat, Band: 24, Seite: 385403
• Kozhummal R, Yang Y, Güder F, Hartel AM, Lu X, Küçükbayrak U, Mateo-Alonso A, Elwenspoek M, Zacharias M
  Homoepitaxial Branching: An Unusual Polymorph of Zinc Oxide Derived from Seeded Solution Growth
  2012 Acs Nano, Band: 6, Nummer: 8, Seiten: 7133 - 7141
• Subannajui K, Menzel A, Güder F, Yang Y, Schumann K, Lu X, Zacharias M
  Large-Scale Nano Piezo Force Position Arrays as Ultrahigh-Resolution Micro- and Nanoparticle Tracker
  2012 Adv Funct Mater, Band: 23, Nummer: 2, Seiten: 191 - 197
• Nguyen, A.P.D., Stesmans, A., Hiller, D., et al.
  Near-interface Si substrate 3d metal contamination during atomic layer deposition processing detected by electron spin resonance
  2012 J Appl Phys, Band: 111, Nummer: 11
• Subannajui K, Wongchoosuk C, Ramgir N, Wang C Y, Yang Y, Hartel A M, Cimalla V, Zacharias M
  Photoluminescent and gas-sensing properties of ZnO nanowires prepared by an ionic assisted vapor transfer approach
  2012 J.Appl. Phys 2012, Band: 112, Seite: 034311
• Menzel A, Goldberg R, Burshtein G, Lumelsky V, Subannajui K, Zacharias Z, Lifshitz L
  Role of Carrier Gas Flow and Species Diffusion in Nanowire Growth from Thermal CVD
  2012 J Phys Chem C, Band: 116, Nummer: 9, Seiten: 5524 - 5530
• Xiong Q., Grimes C A, Zacharias M, Fontcuberta i Morral A, Hiruma K, Shen G
  Semiconductor Nanowires and Nanotubes: From Fundamentals to Diverse Applications
  2012 Int J Nanotechnol, Band: 2012
• Hartel AM, Gutsch S, Hiller D, Kübel C, Zakharov N, Werner P, Zacharias M
  Silicon nanocrystals prepared by plasma enhanced chemical vapor deposition: Importance of parasitic oxidation for third generation photovoltaic applications
  2012 Appl Phys Lett, Band: 101, Seite: 193103
• Lee BG, Hiller D, Luo JW, Semonin OE, Beard MC, Zacharias M, Stradins P
  Strained Interface Defects in Silicon Nanocrystals
  2012 Adv Funct Mater, Band: 22, Nummer: 12, Seiten: 3223 - 3232
• Güder F, Yang Y, Menzel A, Wang CY
  Superior Functionality by Design: Selective Ozone Sensing Realized by Rationally Constructed High-Index ZnO Surfaces
  2012 Small, Band: 8, Nummer: 21, Seiten: 3307 - 3314
• Menzel A, Subannajui K, Bakhda R, Wang Y, Thomann R, Zacharias M
  Tuning the Growth Mechanism of ZnO Nanowires by Controlled Carrier and Reaction Gas Modulation in Thermal CVD
  2012 J Phys Chem Lett, Band: 3, Nummer: 19, Seiten: 2815 - 2821

2011

 nach oben zur Jahresübersicht

• Subannajui K, Guder F, Zacharias M
  Bringing Order to the World of Nanowire Devices by Phase Shift Lithography
  2011 Nano Lett, Band: 11, Nummer: 9, Seiten: 3513 - 3518
• Wongchoosuk C, Subannajui K, Menzel A, Burshtein IA, Tamir S, Lifshitz Y, Zacharias M
  Controlled Synthesis of ZnO Nanostructures: The Role of Source and Substrate Temperatures
  2011 J Phys Chem C, Band: 115, Nummer: 3, Seiten: 757 - 761
• Hartel AM, Hiller D, Gutsch S, Loeper P, Estradé S, Peiró P, Garrido B, Zacharias M
  Formation of Size Controlled Silicon Nanocrystals in PECVD Grown SiOxNy/SiO2–Superlattices
  2011 Thin Solid Films, Band: 520, Seiten: 121 - 125
• Güder F, Yang Y, Danhof J, Hartel A, Schwarz UT, Zacharias M
  Improved optical properties of ZnO thin films by concurrently introduced interfacial voids during thermal annealing
  2011 Appl Phys Lett, Band: 99, Nummer: 2, Seite: 023105
• Menzel A, Subannajui K, Moser F, Paul O, Zacharias M
  Multifunctional ZnO-nanowire based sensor
  2011 Adv Funct Mater, Nummer: 22, Seiten: 4342 - 4348
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  Kurzfassung

  Adv. Funct. Materials 21 issue 22 (2011) 4342-4348 (DOI: 10.1002/adfm.201101549
• Wang CY, Kinzer M, Youn SK, Ramgir N, Kunzer M, Kohler K, Zacharias M, Cimalla V
  Oxidation behaviour of carbon monoxide at the photostimulated surface of ZnO nanowires
  2011 J Appl Phys, Band: 44, Nummer: 30, Seite: 305302
• Zhigunov DM, Dyakov SA, Timoshenko VY, Yablonskiy AN, Hiller D, Zacharias M
  Photoluminescence properties of Er-implanted SiO/SiO2 multilayered structures with amorphous and crystalline Si nanoclysters
  2011 J Nanoelectron Optoe, Band: 6
• Löper P, Müller R, Hiller D, Barthel T, Malguth E, Janz S, Goldschmidt JC, Hermle M, Zacharias M
  Quasi-Fermi-level splitting in ideal silicon nanocrystal superlattices
  2011 Phys Rev B, Band: 84, Seite: 195317
• Hiller D, Götze S, Zacharias M
  Rapid thermal annealing of size-controlled Si nanocrystals: Dependence of interface defect density on thermal budget
  2011 J Appl Phys, Band: 109, Nummer: 9, Seite: 054308
• Yang Y, Liu L, Gueder F, Berger A, Scholz R, Albrecht O, Zacharias M
  Regulated Oxidation of Ni in Multisegmented Ni/Pt Nanowires: An Entry to Wavy Nanopeapods
  2011 Angew Chem Int Edit, Band: 123, Seiten: 11047 - 11050
• Jivanescu M, Hiller D, Zacharias M, Stesmans A
  Size dependence of P(b)-type photoluminescence quenching defects at the Si nanocrystal interface
  2011 Epl-europhys Lett, Band: 96, Nummer: 2, Seite: 27003
• Chong YT, Yau MYE, Yang Y, Zacharias M, Gorlitz D, Nielsch K, Bachmann J
  Superparamagnetic behavior in cobalt iron oxide nanotube arrays by atomic layer deposition
  2011 Appl Phys Lett, Band: 110, Nummer: 4, Seite: 043930
• Güder F, Yang Y, Goetze S, Berger A, Scholz R, Hiller D, Hesse D, Zacharias M
  Toward Discrete Multilayered Composite Structures: Do Hollow Networks Form in a Polycrystalline Infinite Nanoplane by the Kirkendall Effect?
  2011 Chem Mater, Band: 23, Nummer: 20, Seiten: 4445 - 4451
• Zacharias M
  Ulrich Gösele – 35 years of research: From defects and diffusion to nanomaterials
  2011 Phys Status Solidi C, Band: 8, Nummer: 3, Seiten: 655 - 658

2010

 nach oben zur Jahresübersicht

• Liu L, Albrecht O, Pippel E, Nielsch K, Gösele U
  A novel synthesis of ultrathin CoPt3 nanowires by dealloying larger diameter Co99Pt1 nanowires and subsequent stress-induced crack propagation
  2010 Electrochem Commun, Nummer: 12, Seite: 835
• Güder F, Yang Y, Krueger M, Stevens GB, Zacharias M
  Atomic Layer Deposition on Phase-Shift Lithography Generated Photoresist Patterns for 1D Nanochannel Fabrication
  2010 Acs Appl Mater Inter, Band: 2, Nummer: 12, Seiten: 3473 - 3478
• Youn SK, Ramgir N, Wang CY, Subannajui K, Cimalla V, Zacharias M
  Catalyst-Free Growth of ZnO Nanowires Based on Topographical Confinement and Preferential Chemisorption and Their Use for Room Temperature CO Detection
  2010 J Phys Chem C, Band: 114, Nummer: 22, Seiten: 10092 - 10100
• Güder F, Yang Y, Goetze S, Berger A, Ramgir N, Hesse D, Zacharias M
  Controlled Positioning of Large Interfacial Nanocavities via Stress-Engineered Void Localization
  2010 Small, Band: 6, Nummer: 15, Seiten: 1603 - 1607
• Yang Y, Gueder F, Zacharias M
  Diffusion-Induced Void Evolution in Core-Shell Nanowires: Elaborated View on the Nanoscale Kirkendall Effect
  2010 Isr J Chem, Band: 50, Nummer: 4, Seiten: 439 - 448
• Kim DS, Richters JP, Scholz R, Voss T, Zacharias
  Modulation of carrier density in ZnO nanowires without impurity doping
  2010 Appl Phys Lett, Band: 96, Nummer: 12, Seite: 123110
• Ramgir NS, Yang Y, Zacharias M
  Nanowire-Based Sensors
  2010 Small, Band: 6, Nummer: 16, Seiten: 1705 - 1722
• Hiller D, Götze S, Munnik F, Jivanescu M, Gerlach JW, Vogt J, Pippel E, Zakharov N, Stesmans A, Zacharias M
  Nitrogen at the Si-nanocrystal/SiO2 interface and its influence on luminescence and interface defects
  2010 Phys Rev B, Band: 82, Nummer: 19, Seite: 195401
• Hiller D, Jivanescu M, Stesmans A, Zacharias M
  P-b(0) centers at the Si-nanocrystal/SiO2 interface as the dominant photoluminescence quenching defect
  2010 J Appl Phys, Band: 107, Nummer: 8, Seite: 084309
• Ramgir NS, Subannajui K, Yang Y, Grimm R, Michiels R, Zacharias M
  Reactive VLS and the Reversible Switching between VS and VLS Growth Modes for ZnO Nanowire Growth
  2010 J Phys Chem C, Band: 114, Nummer: 23, Seiten: 10323 - 10329
• Subannajui K, Ramgir N, Grimm R, Michiels R, Yang Y, Muller S, Zacharias M
  ZnO Nanowire Growth: A Deeper Understanding Based on Simulations and Controlled Oxygen Experiments
  2010 Cryst Growth Des, Band: 10, Nummer: 4, Seiten: 1585 - 1589
• Zacharias M, Subannajui K, Menzel A, Yang Y
  ZnO nanowire arrays - Pattern generation, growth and applications
  2010 Phys Status Solidi B, Band: 247, Nummer: 10, Seiten: 2305 - 2314

2009

 nach oben zur Jahresübersicht

• Seo SY, Zhang RJ, Loffler W, Kalt H, Kim KJ, Zacharias M
  Far-field observation of the radial profile of visible whispering-gallery modes in a single microdisk based on Si-nanocrystal/SiO(2) superlattices
  2009 J Appl Phys, Band: 106, Nummer: 12, Seite: 123102
• Jivanescu M, Stesmans A, Zacharias M
  Inherent paramagnetic defects in layered nanocrystalline Si/SiO2 superstructures
  2009 Physica E, Band: 41, Nummer: 6, Seiten: 947 - 950
• Yang Y, Scholz R, Fan HJ, Hesse D, Gösele U, Zacharias M
  Multitwinned Spinel Nanowires by Assembly of Nanobricks via Oriented Attachment: A Case Study of Zn2TiO4
  2009 Acs Nano, Band: 3, Seiten: 555 - 562
• Shalygina OA, Kamenskikh IA, Zhigunov DM, Timoshenko VY, Kashkarov PK, Zacharias M, Fujii M
  Optical Properties of Silicon Nanocrystals in Silicon Dioxide Matrix Over Wide Ranges of Excitation Intensity and Energy
  2009 J Nanoelectron Optoe, Band: 4, Nummer: 1, Seiten: 147 - 151
• Kim DS, Gosele U, Zacharias M
  Surface diffusion induced growth of ZnO nanowires
  2009 J. of Crystal Growth, Band: 311, Nummer: 11, Seiten: 3216 - 3219
• Fan HJ, Yang Y, Zacharias M
  ZnO-based Ternary Compound Nanotubes and Nanowires
  2009 J Mater Chem, Band: 19, Nummer: 7, Seiten: 885 - 900

2008

 nach oben zur Jahresübersicht

• Godefroo S, Hayne M, Jivanescu M, Stesmans A, Zacharias M, Lebedev O, Van Tendeloo G, Moshchalkov V V
  Classification and control of the origin of photoluminescence from Si nanocrystals
  2008 Nat Nanotechnol, Band: 3, Nummer: 3, Seiten: 174 - 178
• Fallert J, Stelzl F, Zhou HJ, Wissinger M, Hauser M, Klingshirn C, Kalt H, Kim DS, Zacharias M, Reiser A, Thonke K, Sauer R
  Dynamics of Stimulated Emission in Single Zn Nanorod Resonators
  2008 J Korean Phys Soc, Band: 53, Nummer: 5, Seiten: 2840 - 2843
• Subannajui K, Kim DS, Zacharias M
  Electrical analysis of individual ZnO nanowires
  2008 J Appl Phys, Band: 104, Nummer: 1, Seite: 014308
• Zacharias M, Fan H J
  From ordered arrays of nanowires to controlled solid state reactions
  2008 Advances in Solid State Physics
• Kim DS, Scholz R, Gosele U, Zacharias M
  Gold at the root or at the tip of ZnO nanowires: a model
  2008 Small, Band: 4, Nummer: 10, Seiten: 1615 - 1619
• Richters JP, Voss T, Kim DS, Scholz R, Zacharias M
  Hierarchical three-dimensional ZnO from ZnO/Al2O3 core-shell structures
  2008 Nanotechnology, Band: 19, Nummer: 30, Seite: 305202
• Yang Y, Kim D S, Scholz R, Zacharias M
  Hierarchical three-dimensional ZnO from Zno/Al2O3 core-shell structures
  2008 Chem Mater, Band: 20, Nummer: 10, Seiten: 3487 - 3494
• Yang Y, Kim DS, Scholz R, Knez M, Lee SM, Gösele U, Zacharias M
  Influence of temperature on evolution of coaxial ZnO/Al2O3 one-dimensional heterostructures: from core–shell nanowires to spinel nanotubes and porous nanowires
  2008 J Phys Chem C, Band: 112, Nummer: 11, Seiten: 4068 - 4074
• Jivanescu M, Stesmans A, Zacharias Z
  Inherent paramagnetic defects in layered Si/SiO2 superstructures with Si nanocrystals
  2008 J Appl Phys, Band: 104, Nummer: 10, Seite: 103518
• Fan HJ, Zacharias M
  Manipulation of crawling growth for the formation of sub-millimeter long ZnO nanowalls
  2008 J Mater Sci Technol, Band: 24, Nummer: 4, Seiten: 589 - 593
• Stesmans A, Jivanescu M, Godefroo S, Zacharias M
  Paramagnetic point defects at SiO2/nanocrystalline Si interfaces
  2008 Appl Phys Lett, Band: 93, Nummer: 2, Seite: 023123
• Pan AL, Yao LD, Qin Y, Yang Y, Kim DS, Yu RC, Zou BS, Werner P, Zacharias M, Gosele U
  Si-CdSSe core/shell nanowires with continuously tunable light emission
  2008 Nano Lett, Band: 8, Nummer: 10, Seiten: 3413 - 3417
• Fan HJ, Lotnyk A, Scholz R, Yang Y, Kim DS, Pippel E, Hesse D, Zacharias M
  Surface Reaction of ZnO Nanowires with Electron-Beam Generated Alumina Vapor
  2008 J. of Physical Chemistry, Band: 112, Nummer: 17, Seiten: 6770 - 6774
• Kim DS, Scholz R, Gosele U, Zacharias M
  Synthesis and optical properties of ZnO and carbon nanotube based coaxial heterostructures
  2008 Appl Phys Lett, Band: 93, Nummer: 10, Seite: 103108
• Yang Y, Scholz R, Berger A, Kim DS, Knez M, Hesse D, Gosele U, Zacharias M
  Transmission Electron Microscopy in situ Fabrication of ZnO/Al(2)O(3) Composite Nanotubes by Electron-Beam-Irradiation-Induced Local Etching of ZnO/Al(2)O(3) Core/Shell Nanowires
  2008 Small, Band: 4, Nummer: 12, Seiten: 2112 - 2117

2007

 nach oben zur Jahresübersicht

• Pan AL, Wang X, He P, Zhang Q, Wan Q, Zhu X, Zacharias M, Zuo B
  Color-changeable optical transport through Se doped CdS 1D nanostructures
  2007 Nano Lett, Band: 7, Seiten: 2970 - 2975
• Bauer J, Fleischer F, Breitenstein O, Schubert L, Werner P, Gösele U, Zacharias M
  Electrical properties of undoped MBE grown silicon nanowires
  2007 Appl Phys Lett, Band: 90, Nummer: 1, Seite: 012105
• Jivanescu M, Stesmans A, Godefroo S, Zacharias M
  Electron spin resonance analysis of Si nanocrystals embedded in a SiO2 matrix
  2007 Journal of Optoelctronics and Advanced Materials, Band: 9, Nummer: 3, Seiten: 721 - 724
• Pan AL, Liu RB, Zhang QL, Wan Q, He PB, Zacharias M, Zou BS
  Fabrication and red-color lasing of individual highly uniform single-crystal CdSe nanobelts
  2007 J Phys Chem C, Band: 111, Nummer: 38, Seiten: 14253 - 14256
• Fan H J, Gösele U, Zacharias M
  Formation of nanotubes and hollow nanoparticles based on Kirkendall and diffusion processes: A review
  2007 Small, Band: 3, Nummer: 10, Seiten: 1660 - 1671
• Hoffmann, Ostlung F, Michler J, Fan HJ, Zacharias M, Christiansen SH, Ballif C
  Fracture strength and Young’s modulus of ZnO nanowires
  2007 Nanotechnology, Band: 18, Nummer: 20, Seite: 205503
• Kim DS, Fallert J, Lotnyk A, Scholz R, Pippel E, Senz S, Kalt H, Gosele U, Zacharias M
  Growth and optical properties of phosphorus-doped ZnO nanowires
  2007 Solid State Commun, Band: 143, Seiten: 570 - 573
• Fan HJ, Knez M, Scholz R, Hesse D, Nielsch K, Zacharias M, Gosele U
  Influence of surface diffusion on the formation of hollow nanostructures induced by the Kirkendall effect: The basic concept
  2007 Nano Lett, Band: 7, Nummer: 4, Seiten: 993 - 997
• Kim DS, Ji R, Fan H J, Bertram F, Dadgar R, Nielsch K, Krost A, Christen J, Gösele U, Zacharias M
  Laser interference lithography tailored for highly symmetric arranged ZnO nanowire arrays.
  2007 Small, Band: 3, Nummer: 1, Seiten: 76 - 80
• Yi LX, Scholz R, Zacharias M
  Size and density control of Si nanocrystals realized by SiOx/SiO2 superlattice
  2007 J. of Luminescence, Band: 122, Seiten: 750 - 752
• Fan HJ, Barnard AS, Zacharias M
  ZnO nanowires and nanobelts: Shape selection and thermodynamic
  2007 Appl Phys Lett, Band: 90, Nummer: 14, Seite: 143116

2006

 nach oben zur Jahresübersicht

• Zimina A, Eisebitt S, Eberhardt W, Heitmann J, Zacharias M
  Electronic structure and chemical environment of silicon nanoclusters embedded in a silicon dioxide matrix.
  2006 Appl Phys Lett, Band: 88, Nummer: 16, Seite: 163103
• Alexe M, Hesse D, Schmidt V, Senz S, Fan HJ, Zacharias M, Gösele U
  Ferroelectric nanotubes fabricated using nanowires as positive templates.
  2006 Appl Phys Lett, Band: 89, Nummer: 17, Seite: 172907
• Pan AL, Liu R, Wang F, Xie S, Zou B, Zacharias M, Wang ZL
  High-quality alloyed CdSxSe1-x wiskers as waveguides with tunable stimulated emission.
  2006 J Phys Chem B, Band: 110, Nummer: 45, Seiten: 22313 - 22317
• Zhao L, Lu T, Zacharias M, Shen J, Hofmeister H, Steinhart M, Gösele U
  Integration of Erbium-Doped Lithium Niobate Microtubes into Ordered Macroporous Silicon.
  2006 Adv Mater, Band: 18, Nummer: 3, Seite: 363
• Fan HJ, Knez M, Scholz R, Nielsch K, Pippel E, Hesse D, Zacharias M, Gösele U
  Monocrystalline spinel nanotube fabrication based on Kirkendall effect.
  2006 Nat Mater, Band: 5, Nummer: 8, Seiten: 627 - 631
• Kolb FM, Berg A, Hofmeister H, Pippel E, Nielsch K, Hesse D, Gösele U, Zacharias M
  Periodic chains of gold nanoparticles and the role of oxygen during the growth of silicon nanowires
  2006 Appl Phys Lett, Band: 89, Nummer: 17, Seite: 173111
• Zhigunov DM, Shalygina OA, Teterukov SA, Timoshenko VY, Kashkarov PK, Zacharias M
  Photoluminescence of erbium ions in heterostructures with silicon nanocrystals
  2006 Semiconductors+, Band: 40, Nummer: 10, Seiten: 1193 - 1197
• Timoshenko VY, Zhigunov DM, Kashkarov PK, Shalygina OA, Teterukov SA, Zhang RJ, Zacharias M, Fujii M, Hayashi S
  Photoluminescence properties of erbium-doped structures of silicon nanocrystals in silicon dioxide matrix
  2006 J Non-cryst Solids, Band: 352, Nummer: 9-20, Seiten: 1192 - 1195
• Buttner CC, Zacharias M
  Retarded oxidation of Si nanowires
  2006 Appl Phys Lett, Band: 89, Nummer: 26, Seite: 263106
• Fan HJ, Werner P, Zacharias M
  Semiconductor nanowires: From self-organization to patterned growth
  2006 Small, Band: 2, Nummer: 6, Seiten: 700 - 717
• Lu TZ, Alexe M, Scholz R, Talalaev V, Zhang RJ, Zacharias M
  Si nanocrystal based memories: Effect of the nanocrystals density.
  2006 J Appl Phys, Band: 100, Nummer: 1, Seite: 014310
• Zhao L, Lu TZ, Yosef M, Steinhart M, Zacharias M, Gösele U, Schlecht S
  Single-Crystalline CdSe Nanostructures: from Primary Grains to Oriented Nanowires
  2006 Chem Mater, Band: 18, Nummer: 26, Seiten: 6094 - 6096
• Fan HJ, Knez M, Scholz R, Pippel E, Nielsch K, Hesse D, Gösele U, Zacharias M
  Single-crystalline MgAl2O4 spinel nanotubes using a reactive and removable MgO nanowire template.
  2006 Nanotechnology, Band: 17, Nummer: 20, Seiten: 5157 - 5162
• Hauschild R, Lange H, Priller H, Klingshirn C, Kling R, Kalt H, Waag A, Fan HJ, Zacharias M
  Stimulated Emission from ZnO Nanorods
  2006 Phys Status Solidi B, Band: 243, Nummer: 4, Seiten: 853 - 857
• Fan HJ, Lee W, Hauschild R, Alexe M, Le Rhun G, Scholz R, Dadgar A, Nielsch K, Kalt H, Krost A, Zacharias M, Gosele U
  Template-assisted large-scale ordered Arrays of ZnO pillars for optical and piezoelectric applications
  2006 Small, Band: 2, Nummer: 4, Seiten: 561 - 568
• Fan HJ, Fuhrmann B, Scholz R, Himcinschi C, Berger A, Leipner H, Dadgar A, Krost A, Christiansen S, Gösele U, Zacharias M
  Vapor-transport-deposition growth of ZnO nanostructures: switch between c-axial wires and a-axial belts by indium doping
  2006 Nanotechnology, Band: 17, Nummer: 11, Seiten: S231 - S239
• Zhang RJ, Seo SY, Milenin AP, Zacharias M, Gosele U
  Visible range whispering-gallery mode in microdisk array based on size-controlled Si nanocrystals
  2006 Appl Phys Lett, Band: 88, Nummer: 15, Seite: 15312
• Fan HJ, Fuhrmann B, Scholz R, Syrowatka F, Dadgar A, Krost A, Zacharias M
  Well-ordered ZnO arrays on GaN substrates fabricated via nanosphere lithography and mask transfer techniques
  2006 J. of Crystal Growth, Band: 287, Nummer: 1, Seiten: 34 - 38

2005

 nach oben zur Jahresübersicht

• Fan HJ, Scholz R, Dadgar A, Krost A, Zacharias M
  A low-temperature evaporation route for ZnO nanoneedles and nanosaws
  2005 Appl Phys A-mater, Band: 80, Seiten: 457 - 460
• Fan HJ, Lee W, Scholz R, Dadgar A, Krost A, Nielsch K, Zacharias M
  Arrays of vertically aligned and hexagonally arranged ZnO nanowires: a new template-directed approach
  2005 Nanotechnology, Band: 16, Nummer: 6, Seiten: 913 - 917
• Navarro-Urrios D, Riboli F, Cazzanelli M, Chiasera A, Daldosso N, Pavesi L, Oton CJ, Heitmann J, Yi LX, Scholz R, Zacharias M
  Birefringence characterization of mono-dispersed silicon nanocrystals planar waveguides
  2005 Opt Mater, Band: 27, Nummer: 5, Seiten: 763 - 768
• Zacharias M, Werner P
  Das Wachstum von Halbleiternanodrähten
  2005 Physik Journal, Band: 4, Seite: 29
• Lu TZ, Shen J, Mereu B, Alexe M, Scholz R, Talalaev V, Zacharias M
  Electrical behavior of size-controlled Si nanocrystals arranged as single layers
  2005 Appl Phys A-mater, Band: 80, Nummer: 8, Seiten: 1631 - 1634
• Timoshenko VY, Shalygina OA, Lisachenko MG, Zhigunov DM, Teterukov SA, Kashkarov KP, Kovalev D, Zacharias M, Imakita K, Fuijii M
  Erbium ion luminescence of silicon nanocrystal layers in a silicon dioxide matrix measured under strong optical excitation
  2005 Phys Solid State+, Band: 47, Nummer: 1, Seite: 121
• Fan HJ, Scholz R, Zacharias M, Gosele U, Bertram F, Forster D, Christen J
  Local luminescence of ZnO nanowire-covered surface: A cathodoluminescence microscopy study
  2005 Appl Phys Lett, Band: 86, Nummer: 2, Seite: 023113
• Lu TZ, Alexe M, Scholz R, Zacharias M
  Multilevel charge storage in Si nanocrystal superlattices
  2005 Appl Phys Lett, Band: 87, Nummer: 20, Seite: 202110
• Kolb FM, Hofmeister H, Zacharias M, Gosele U
  On the morphological instability of silicon/silicon dioxide nanowires
  2005 Appl Phys A-mater, Band: 80, Nummer: 7, Seiten: 1405 - 1408
• Richter S, Steinhart M, Hofmeister H, Zacharias M, Gösele U, Gaponik N, Eychmuller A, Rogach A L, Wendorff JH, Schweizer SL, von Rhein A, Wehrspon RB
  Quantum dot emitters in two-dimensional photonic crystals of macroporous silicon
  2005 Appl Phys Lett, Band: 87, Nummer: 14, Seite: 142107
• Heitmann J, Muller F, Zacharias M, Gosele U
  Silicon nanocrystals: Size matters
  2005 Adv Mater, Band: 17, Nummer: 7, Seiten: 795 - 803

2004

 nach oben zur Jahresübersicht

• Riboli F, Navarro-Urrios D, Chiasera A, Daldosso N, Pavesi L, Oton CJ, Heitmann J, Yi LX, Scholz R, Zacharias M
  Birefringence in optical waveguides made by silicon nanocrystal superlattices
  2004 Appl Phys Lett, Band: 85, Nummer: 7, Seiten: 1268 - 1270
• Timoshenko VY, Lisachenko MG, Shalygina OA, Kamenev BV, Zhigunov DM, Teterukov SA, Kashkarov PK, Heitmann J, Schmidt M, Zacharias M
  Comparative study of photoluminescence of undoped and erbium-doped size-controlled nanocrystalline Si/SiO2 multilayered structures
  2004 J Appl Phys, Band: 96, Nummer: 4, Seiten: 2254 - 2260
• Heitmann J, Muller F, Yi LX, Zacharias M, Kovalev D, Eichhorn F
  Excitons in Si nanocrystals: Confinement and migration effects
  2004 Phys Rev B, Band: 69, Nummer: 19, Seite: 195309
• Fan HJ, Scholz R, Kolb FM, Zacharias M, Gosele U
  Growth mechanism and characterization of zinc oxide microcages
  2004 Solid State Commun, Band: 130, Nummer: 8, Seiten: 517 - 521
• Kashkarov PK, Kamenev BV, Lisachenko MG, Shalygina OA, Timoshenko VY, Schmidt M, Heitmann J, Zacharias M
  High-efficiency erbium ion luminescence in silicon nanocrystal systems
  2004 Phys Solid State+, Band: 46, Nummer: 1, Seiten: 104 - 108
• Timoshenko VY, Lisachenko MG, Kamenev BV, Shalygina OA, Kashkarov PK, Heitmann J, Schmidt M, Zacharias M
  Highly efficient sensitizing of erbium ion luminescence in size-controlled nanocrystalline Si/SiO2 superlattice structures
  2004 Appl Phys Lett, Band: 84, Nummer: 14, Seiten: 2512 - 2514
• Fan HJ, Scholz R, Kolb FM, Zacharias M, Gosele U, Heyroth F, Eisenschmidt C, Hempel T, Christen J
  On the growth mechanism and optical properties of ZnO multi-layer nanosheets
  2004 Appl Phys A-mater, Band: 79, Nummer: 8, Seiten: 1895 - 1900
• Cazzanelli M, Navarro-Urrios D, Riboli F, Daldosso N, Pavesi L, Heitmann J, Yi LX, Scholz R, Zacharias M, Gosele U
  Optical gain in monodispersed silicon nanocrystals
  2004 J Appl Phys, Band: 96, Nummer: 6, Seiten: 3164 - 3171
• Richter S, Hillebrand R, Jamois C, Zacharias M, Gosele U, Schweizer SL, Wehrspohn RB
  Periodically arranged point defects in two-dimensional photonic crystals
  2004 Phys Rev B, Band: 70, Nummer: 19, Seite: 193302
• Fan HJ, Bertram F, Dadgar A, Christen J, Krost A, Zacharias M
  Self-assembly of ZnO nanowires and the spatial resolved characterization of their luminescence
  2004 Nanotechnology, Band: 15, Nummer: 11, Seiten: 1401 - 1404
• Fan HJ, Scholz R, Kolb FM, Zacharias M
  Two-dimensional dendritic ZnO nanowires from oxidation of Zn microcrystals
  2004 Appl Phys Lett, Band: 85, Nummer: 18, Seiten: 4142 - 4144

2003

 nach oben zur Jahresübersicht

• Heitmann J, Schmidt M, Zacharias M, Timoshenko VY, Lisachenko MG, Kashkarov PK
  Fabrication and photoluminescence properties of erbium doped size-controlled silicon nanocrystals
  2003 Mat Sci Eng B-adv, Band: 105, Nummer: 1-3, Seiten: 214 - 220
• Yi LX, Heitmann J, Scholz R, Zacharias M
  Phase separation of thin SiO layers in amorphous SiO/SiO2 superlattices during annealing
  2003 J Phys-condens Mat, Band: 15, Nummer: 39, Seiten: S2887 - S289
• Kashkarov PK, Lisachenko MG, Shalygina OA, Timoshenko VY, Kamenev BV, Schmidt M, Heitmann J, Zacharias M
  Photoluminescence of Er3+ ions in layers of quasi-ordered silicon nanocrystals in a silicon dioxide matrix
  2003 J Exp Theor Phys+, Band: 97, Nummer: 6, Seiten: 1123 - 1130

2002

 nach oben zur Jahresübersicht

• Schmidt M, Heitmann J, Scholz R, Zacharias M
  Bright luminescence from erbium doped nc-Si/SiO2 superlattices
  2002 J Non-cryst Solids, Band: 299, Seiten: 678 - 682
• Yi LX, Heitmann J, Scholz R, Zacharias M
  Si rings, Si clusters, and Si nanocrystals-different states of ultrathin SiOx layers
  2002 Appl Phys Lett, Band: 81, Nummer: 22, Seiten: 4248 - 4250
• Heitmann J, Scholz R, Schmidt M, Zacharias M
  Size controlled nc-Si synthesis by SiO/SiO2 superlattices
  2002 J Non-cryst Solids, Band: 299, Seiten: 1075 - 1078
• Zacharias M, Heitmann J, Scholz R, Kahler U, Schmidt M, Blasing J
  Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach
  2002 Appl Phys Lett, Band: 80, Nummer: 4, Seiten: 661 - 631

2001

 nach oben zur Jahresübersicht

• Zacharias M, Heitmann J, Schmidt M, Streitenberger P
  Confinement effects in crystallization and Er doping of Si nanostructures
  2001 Physica E, Band: 11, Nummer: 2-3, Seiten: 245 - 251
• Schmidt M, Zacharias M, Richter S, Fischer P, Veit P, Blasing J, Breeger B
  Er doping of nanocrystalline-Si/SiO2 superlattices
  2001 Thin Solid Films, Band: 397, Nummer: 1-2, Seiten: 211 - 215

2000

 nach oben zur Jahresübersicht

• Zacharias M, Streitenberger P
  Crystallization of amorphous superlattices in the limit of ultrathin films with oxide interfaces
  2000 Phys Rev B, Band: 62, Nummer: 12, Seiten: 8391 - 8396
• Zacharias M, Blasing J, Hirschman K, Tsybeskov L, Fauchet PM
  Extraordinary crystallization of amorphous Si/SiO2 superlattices
  2000 J Non-cryst Solids, Band: 266, Seiten: 640 - 644
• Zacharias M, Richter S, Fischer P, Schmidt M, Wendler E
  Room temperature luminescence of Er doped nc-Si/SiO2 superlattices
  2000 J Non-cryst Solids, Band: 266, Seiten: 608 - 613
• Fischer P, Christen J, Zacharias M, Schwegler V, Kirchner C, Kamp M
  Spatially resolved imaging of the spectral emission characteristic of an InGaN/GaN-multi quantum well- light-emitting diode by scanning electroluminescence microscopy
  2000 Jpn J Appl Phys, Band: 39, Nummer: 4B, Seiten: 2414 - 2416

1999

 nach oben zur Jahresübersicht

• Fischer P, Christen J, Zacharias M, Schwegler V, Kirchner C, Kamp M
  Direct imaging of the spectral emission characteristic of an InGaN/GaN-ultraviolet light-emitting diode by highly spectrally and spatially resolved electroluminescence and photoluminescence microscopy
  1999 Appl Phys Lett, Band: 75, Nummer: 22, Seiten: 3440 - 3442
• Fischer P, Christen J, Zacharias M, Schwegler V, Kirchner C, Kamp M
  Scanning electroluminescence microscopy: A powerful novel characterization tool for light emitting diodes
  1999 Phys Status Solidi A, Band: 176, Nummer: 1, Seiten: 119 - 123
• Zacharias M, Blasing J, Veit P, Tsybeskov L, Hirschman K, Fauchet PM
  Thermal crystallization of amorphous Si/SiO2 superlattices
  1999 Appl Phys Lett, Band: 74, Nummer: 18, Seiten: 2614 - 2616

1998

 nach oben zur Jahresübersicht

• Tsybeskov L, Hirschman KD, Duttagupta SP, Fauchet PM, Zacharias M, McCaffrey JP, Lockwoood DJ
  Fabrication of nanocrystalline silicon superlattices by controlled thermal recrystallization
  1998 Phys Status Solidi A, Band: 165, Nummer: 1, Seiten: 69 - 77
• Zacharias M, Fauchet PM
  Light emission from Ge and GeO2 nanocrystals
  1998 J Non-cryst Solids, Band: 227, Seiten: 1058 - 1062
• Fischer P, Christen J, Zacharias M, Nakashima H, Hiramatsu K
  Nanocharacterization of semiconductors by scanning photoluminescence microscopy
  1998 Solid State Phenom, Band: 63-4, Seiten: 154 - 158
• Zacharias M, Tsybeskov L, Hirschman KD, Fauchet PM, Blasing J, Kohlert P, Veit P
  Nanocrystalline silicon superlattices: fabrication and characterization
  1998 J Non-cryst Solids, Band: 227, Seiten: 1132 - 1136
• Weigand R, Zacharias M, Blasing J, Veit P, Christen J, Wendler E
  On the origin of blue light emission from Ge-nanocrystals containing a-SiOx films Author(s): Weigand, R; Zacharias, M; Blasi
  1998 Superlattice Microst, Band: 23, Nummer: 2, Seiten: 349 - 354
• von Behren J, van Buuren T, Zacharias M, Chimowitz EH, Fauchet PM
  Quantum confinement in nanoscale silicon: The correlation of size with bandgap and luminescence
  1998 Solid State Commun, Band: 105, Nummer: 5, Seiten: 317 - 322
• Blasing J, Kohlert P, Zacharias M, Veit P
  X-ray fine structure investigation of germanium nanoclusters
  1998 J Appl Crystallogr, Band: 31, Seiten: 589 - 593

1997

 nach oben zur Jahresübersicht

• Zacharias M, Weigand R, Dietrich B, Stolze F, Blasing J, Veit P, Drusedau T, Christen J
  A comparative study of Ge nanocrystals in SixGeyOz alloys and SiOx/GeOy multilayers
  1997 J Appl Phys, Band: 81, Nummer: 5, Seiten: 2384 - 2390
• Zacharias M, Fauchet PM
  Blue luminescence in films containing Ge and GeO2 nanocrystals: The role of defects
  1997 Appl Phys Lett, Band: 71, Nummer: 3, Seiten: 380 - 382

1996

 nach oben zur Jahresübersicht

• Zacharias M, Blasing J, Lohmann M, Christen J
  Formation of Ge nanocrystals in amorphous GeOx and SiGeOx alloy films
  1996 Thin Solid Films, Band: 278, Seiten: 32 - 36
• Zacharias M, Blasing J, Christen J, Wendt U
  Ge nanocrystals with a sharp size distribution: A detailed study of the crystallization of a-Si1-xOxGey alloy films
  1996 J Non-cryst Solids, Band: 198, Seiten: 919 - 922
• Zacharias M, DimovaMalinovska D, Stutzmann M
  Properties of hydrogenated amorphous silicon suboxide alloys with visible room-temperature photoluminescence
  1996 Philos Mag, Band: 73, Seiten: 799 - 816
• Freistedt H, Stolze F, Zacharias M, Blasing J, Drusedau TP
  The formation of germanium nanocrystals by thermal annealing of a-SiOx:H/a-GeOx:H multilayers
  1996 Phys Status Solidi B, Band: 193, Nummer: 2, Seiten: 375 - 389

1995

 nach oben zur Jahresübersicht

• Zacharias M, Blasing J, Christen J, Veit P, Dietrich B, Bimberg D
  Formation of Ge nanocrystals with sharp size distribution: Structural and optical characterization
  1995 Superlattice Microst, Band: 18, Nummer: 2, Seiten: 139 - 145
• Zacharias M, Blasing J
  Preparation of a-GeOx:H alloys-vibrational, optical, and structural properties
  1995 Phys Rev B, Band: 52, Nummer: 19, Seiten: 14018 - 14024
• Zacharias M, Stolze F, Drusedau T, Bock W
  The preparation of amorphous SixGeYOz alloy films by sputtering- preparation conditions, chemical composition and vibrational properties
  1995 physical status solidi, Band: 189, Nummer: 2, Seiten: 409 - 416

1994

 nach oben zur Jahresübersicht

• Zacharias M, Drusedau T, Panckow A, Fresitedt H, Garke B
  Physical properties of a-SiO(x):H-alloys prepared be dc-magnetron stuttering with water vapor as oxygen source
  1994 J Non-cryst Solids, Band: 169, Seiten: 29 - 36

1993

 nach oben zur Jahresübersicht

• Stolze F, Zacharias M, Schippel S, Garke B
  Compositional investigation of sputtered amorphous SiOx-H
  1993 Solid State Commun, Band: 87, Nummer: 9, Seiten: 805 - 808
• Zacharias M, Freistedt, H, Stolze, F, Drusedau TP, Rosenbauer M, Stutzmann M
  Properties of sputtered a-SiOx:H alloys with a visible luminescence
  1993 J Non-cryst Solids, Band: 166, Seiten: 1089 - 1092

Buchbeiträge

 zurück zur Übersicht aller Publikationen

2014

 nach oben zur Jahresübersicht

• Löper P, Canino M, Schnabel M, Summonte C, Janz S, Zacharias M
  High-Efficiency Solar Cells
  In: High-Bandgap Silicon Nanocrystal Solar Cells: Device Fabrication, Characterization, and Modeling
  2014, Springer Series in Materials Science, Springer International Publishing, Seiten: 165 - 194, Springer International Publishing, ISBN: 978-3-319-01987-1

2012

 nach oben zur Jahresübersicht

• Löper P, Witzky A, Hartel A, Gutsch S, Hiller D, Goldschmidt JC, Janz S, Glunz SW, Zacharias
  Photovoltaic Properties of Silicon Nanocrystals in Silicon Carbide
  In: PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES
  2012, SPIE-INT SOC OPTICAL ENGINEERING, BELLINGHAM, WA 98227-0010 USA, SPIE-INT SOC OPTICAL ENGINEERING, Seite: 82560G , SPIE-INT SOC OPTICAL ENGINEERING, ISBN: 978-0-8194-8899-2

2003

 nach oben zur Jahresübersicht

• Zacharias M, Yi LX, Heitmann J, Scholz R, Reiche M, Gosele U
  Size-controlled Si nanocrystals for photonic and electronic applications
  In: INTERFACIAL EFFECTS AND NOVEL PROPERTIES OF NANOMATERIALS
  2003, TRANS TECH PUBLICATIONS LTD, BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND, Lojkowski, W; Blizzard, JR, Seiten: 95 - 104, Lojkowski, W; Blizzard, JR, ISBN: 3-908450-80-2