Fundamental electronic properties of silicon nanocrystals and their applications

The student will fabricate the Si NCs by PECVD processes, as well as employ them as active layers in light-emitting device structures. The candidate will optimize the electrooptical response of Si NC-based devices by studying both new material approaches (such as co-doped (P, B) Si NCs) and device designs (improvement of electron and hole injection). We offer not only the most adequate tools for optimum material preparation and characterization, but also an environment of highly-experienced researchers and long-term international collaborations, by means of which a better understanding of the Physics governing Si NCs-related phenomena will be achieved.

Master thesis_NCs.pdf — PDF document, 73Kb